The chipmaker will shed light on a series of changes it's making to transistors that ideally will keep a lid on the growing problem of power consumption. Michael Kanellos is editor at large at CNET ...

There is a great deal of activity in wide bandgap (WBG) power electronics lately, with Gallium Nitride (GaN) and Silicon Carbide (SiC) devices getting a lot of attention due to the technologies’ ...

For nearly two decades, two-dimensional (2D) semiconductors have been studied as a complement or possible successor to silicon transistors, promising smaller, faster and more energy-efficient ...

Mayank Shrivastava (third from right) holding a representative power device 8” wafer, with some of his PhD students who work on various aspects of GaN Power and RF technology (Photo credit: IISc) ...

Designed for the toughest engineering environments, NXP Semiconductors N.V. (NASDAQ: NXPI) today unveiled its new XR family of “eXtremely Rugged” LDMOS RF power transistors. The XR family is designed ...

Semiconducting CNTs possess several advantages over traditional silicon, including higher carrier mobility and better electrostatic control at nanoscale dimensions. These properties make them ...

BENGALURU: Researchers from the Indian Institute of Science (IISc) have reported a breakthrough in the design of gallium nitride (GaN) power transistors, a development that could help accelerate the ...